]> git.dujemihanovic.xyz Git - u-boot.git/commitdiff
sunxi: Parameterize bit delay code in H616 DRAM driver
authorJernej Skrabec <jernej.skrabec@gmail.com>
Mon, 10 Apr 2023 08:21:16 +0000 (10:21 +0200)
committerAndre Przywara <andre.przywara@arm.com>
Tue, 11 Apr 2023 23:17:21 +0000 (00:17 +0100)
These values are highly board specific and thus make sense to add
parameter for them. To ease adding support for new boards, let's make
them same as in vendor DRAM settings.

Signed-off-by: Jernej Skrabec <jernej.skrabec@gmail.com>
Acked-by: Andre Przywara <andre.przywara@arm.com>
Signed-off-by: Andre Przywara <andre.przywara@arm.com>
arch/arm/include/asm/arch-sunxi/dram_sun50i_h616.h
arch/arm/mach-sunxi/Kconfig
arch/arm/mach-sunxi/dram_sun50i_h616.c
configs/x96_mate_defconfig

index dbdc6b694ec1d37ec11dbaf7c66f3550ed573987..034ba98bc24364acb736db5812fa3ec9bdc7ab3f 100644 (file)
@@ -155,7 +155,10 @@ struct dram_para {
        u32 dx_odt;
        u32 dx_dri;
        u32 ca_dri;
+       u32 odt_en;
        u32 tpr10;
+       u32 tpr11;
+       u32 tpr12;
 };
 
 
index 4300d388e066df3aa70269ef2621694df11429c6..7b38e83c2d7ee18be263d9990124c97ff86884d4 100644 (file)
@@ -67,11 +67,29 @@ config DRAM_SUN50I_H616_CA_DRI
        help
          CA DRI value from vendor DRAM settings.
 
+config DRAM_SUN50I_H616_ODT_EN
+       hex "H616 DRAM ODT EN parameter"
+       default 0x1
+       help
+         ODT EN value from vendor DRAM settings.
+
 config DRAM_SUN50I_H616_TPR10
        hex "H616 DRAM TPR10 parameter"
        help
          TPR10 value from vendor DRAM settings. It tells which features
          should be configured, like write leveling, read calibration, etc.
+
+config DRAM_SUN50I_H616_TPR11
+       hex "H616 DRAM TPR11 parameter"
+       default 0x0
+       help
+         TPR11 value from vendor DRAM settings.
+
+config DRAM_SUN50I_H616_TPR12
+       hex "H616 DRAM TPR12 parameter"
+       default 0x0
+       help
+         TPR12 value from vendor DRAM settings.
 endif
 
 config SUN6I_PRCM
index 3fe45845b78e38407c3e7e25e693e6df1d9c4d37..f5d8718fefff27281ecc340982973759b65d421e 100644 (file)
@@ -574,7 +574,7 @@ static bool mctl_phy_write_training(struct dram_para *para)
 
 static void mctl_phy_bit_delay_compensation(struct dram_para *para)
 {
-       u32 *ptr;
+       u32 *ptr, val;
        int i;
 
        if (para->tpr10 & TPR10_DX_BIT_DELAY1) {
@@ -582,49 +582,93 @@ static void mctl_phy_bit_delay_compensation(struct dram_para *para)
                setbits_le32(SUNXI_DRAM_PHY0_BASE + 8, 8);
                clrbits_le32(SUNXI_DRAM_PHY0_BASE + 0x190, 0x10);
 
+               if (para->tpr10 & BIT(30))
+                       val = para->tpr11 & 0x3f;
+               else
+                       val = (para->tpr11 & 0xf) << 1;
+
                ptr = (u32 *)(SUNXI_DRAM_PHY0_BASE + 0x484);
                for (i = 0; i < 9; i++) {
-                       writel_relaxed(0x16, ptr);
-                       writel_relaxed(0x16, ptr + 0x30);
+                       writel_relaxed(val, ptr);
+                       writel_relaxed(val, ptr + 0x30);
                        ptr += 2;
                }
-               writel_relaxed(0x1c, SUNXI_DRAM_PHY0_BASE + 0x4d0);
-               writel_relaxed(0x1c, SUNXI_DRAM_PHY0_BASE + 0x590);
-               writel_relaxed(0x1c, SUNXI_DRAM_PHY0_BASE + 0x4cc);
-               writel_relaxed(0x1c, SUNXI_DRAM_PHY0_BASE + 0x58c);
+
+               if (para->tpr10 & BIT(30))
+                       val = (para->odt_en >> 15) & 0x1e;
+               else
+                       val = (para->tpr11 >> 15) & 0x1e;
+
+               writel_relaxed(val, SUNXI_DRAM_PHY0_BASE + 0x4d0);
+               writel_relaxed(val, SUNXI_DRAM_PHY0_BASE + 0x590);
+               writel_relaxed(val, SUNXI_DRAM_PHY0_BASE + 0x4cc);
+               writel_relaxed(val, SUNXI_DRAM_PHY0_BASE + 0x58c);
+
+               if (para->tpr10 & BIT(30))
+                       val = (para->tpr11 >> 8) & 0x3f;
+               else
+                       val = (para->tpr11 >> 3) & 0x1e;
 
                ptr = (u32 *)(SUNXI_DRAM_PHY0_BASE + 0x4d8);
                for (i = 0; i < 9; i++) {
-                       writel_relaxed(0x1a, ptr);
-                       writel_relaxed(0x1a, ptr + 0x30);
+                       writel_relaxed(val, ptr);
+                       writel_relaxed(val, ptr + 0x30);
                        ptr += 2;
                }
-               writel_relaxed(0x1e, SUNXI_DRAM_PHY0_BASE + 0x524);
-               writel_relaxed(0x1e, SUNXI_DRAM_PHY0_BASE + 0x5e4);
-               writel_relaxed(0x1e, SUNXI_DRAM_PHY0_BASE + 0x520);
-               writel_relaxed(0x1e, SUNXI_DRAM_PHY0_BASE + 0x5e0);
+
+               if (para->tpr10 & BIT(30))
+                       val = (para->odt_en >> 19) & 0x1e;
+               else
+                       val = (para->tpr11 >> 19) & 0x1e;
+
+               writel_relaxed(val, SUNXI_DRAM_PHY0_BASE + 0x524);
+               writel_relaxed(val, SUNXI_DRAM_PHY0_BASE + 0x5e4);
+               writel_relaxed(val, SUNXI_DRAM_PHY0_BASE + 0x520);
+               writel_relaxed(val, SUNXI_DRAM_PHY0_BASE + 0x5e0);
+
+               if (para->tpr10 & BIT(30))
+                       val = (para->tpr11 >> 16) & 0x3f;
+               else
+                       val = (para->tpr11 >> 7) & 0x1e;
 
                ptr = (u32 *)(SUNXI_DRAM_PHY0_BASE + 0x604);
                for (i = 0; i < 9; i++) {
-                       writel_relaxed(0x1a, ptr);
-                       writel_relaxed(0x1a, ptr + 0x30);
+                       writel_relaxed(val, ptr);
+                       writel_relaxed(val, ptr + 0x30);
                        ptr += 2;
                }
-               writel_relaxed(0x1e, SUNXI_DRAM_PHY0_BASE + 0x650);
-               writel_relaxed(0x1e, SUNXI_DRAM_PHY0_BASE + 0x710);
-               writel_relaxed(0x1e, SUNXI_DRAM_PHY0_BASE + 0x64c);
-               writel_relaxed(0x1e, SUNXI_DRAM_PHY0_BASE + 0x70c);
+
+               if (para->tpr10 & BIT(30))
+                       val = (para->odt_en >> 23) & 0x1e;
+               else
+                       val = (para->tpr11 >> 23) & 0x1e;
+
+               writel_relaxed(val, SUNXI_DRAM_PHY0_BASE + 0x650);
+               writel_relaxed(val, SUNXI_DRAM_PHY0_BASE + 0x710);
+               writel_relaxed(val, SUNXI_DRAM_PHY0_BASE + 0x64c);
+               writel_relaxed(val, SUNXI_DRAM_PHY0_BASE + 0x70c);
+
+               if (para->tpr10 & BIT(30))
+                       val = (para->tpr11 >> 24) & 0x3f;
+               else
+                       val = (para->tpr11 >> 11) & 0x1e;
 
                ptr = (u32 *)(SUNXI_DRAM_PHY0_BASE + 0x658);
                for (i = 0; i < 9; i++) {
-                       writel_relaxed(0x1a, ptr);
-                       writel_relaxed(0x1a, ptr + 0x30);
+                       writel_relaxed(val, ptr);
+                       writel_relaxed(val, ptr + 0x30);
                        ptr += 2;
                }
-               writel_relaxed(0x1e, SUNXI_DRAM_PHY0_BASE + 0x6a4);
-               writel_relaxed(0x1e, SUNXI_DRAM_PHY0_BASE + 0x764);
-               writel_relaxed(0x1e, SUNXI_DRAM_PHY0_BASE + 0x6a0);
-               writel_relaxed(0x1e, SUNXI_DRAM_PHY0_BASE + 0x760);
+
+               if (para->tpr10 & BIT(30))
+                       val = (para->odt_en >> 27) & 0x1e;
+               else
+                       val = (para->tpr11 >> 27) & 0x1e;
+
+               writel_relaxed(val, SUNXI_DRAM_PHY0_BASE + 0x6a4);
+               writel_relaxed(val, SUNXI_DRAM_PHY0_BASE + 0x764);
+               writel_relaxed(val, SUNXI_DRAM_PHY0_BASE + 0x6a0);
+               writel_relaxed(val, SUNXI_DRAM_PHY0_BASE + 0x760);
 
                dmb();
 
@@ -635,49 +679,93 @@ static void mctl_phy_bit_delay_compensation(struct dram_para *para)
                clrbits_le32(SUNXI_DRAM_PHY0_BASE + 0x54, 0x80);
                clrbits_le32(SUNXI_DRAM_PHY0_BASE + 0x190, 4);
 
+               if (para->tpr10 & BIT(30))
+                       val = para->tpr12 & 0x3f;
+               else
+                       val = (para->tpr12 & 0xf) << 1;
+
                ptr = (u32 *)(SUNXI_DRAM_PHY0_BASE + 0x480);
                for (i = 0; i < 9; i++) {
-                       writel_relaxed(0x10, ptr);
-                       writel_relaxed(0x10, ptr + 0x30);
+                       writel_relaxed(val, ptr);
+                       writel_relaxed(val, ptr + 0x30);
                        ptr += 2;
                }
-               writel_relaxed(0x18, SUNXI_DRAM_PHY0_BASE + 0x528);
-               writel_relaxed(0x18, SUNXI_DRAM_PHY0_BASE + 0x5e8);
-               writel_relaxed(0x18, SUNXI_DRAM_PHY0_BASE + 0x4c8);
-               writel_relaxed(0x18, SUNXI_DRAM_PHY0_BASE + 0x588);
+
+               if (para->tpr10 & BIT(30))
+                       val = (para->odt_en << 1) & 0x1e;
+               else
+                       val = (para->tpr12 >> 15) & 0x1e;
+
+               writel_relaxed(val, SUNXI_DRAM_PHY0_BASE + 0x528);
+               writel_relaxed(val, SUNXI_DRAM_PHY0_BASE + 0x5e8);
+               writel_relaxed(val, SUNXI_DRAM_PHY0_BASE + 0x4c8);
+               writel_relaxed(val, SUNXI_DRAM_PHY0_BASE + 0x588);
+
+               if (para->tpr10 & BIT(30))
+                       val = (para->tpr12 >> 8) & 0x3f;
+               else
+                       val = (para->tpr12 >> 3) & 0x1e;
 
                ptr = (u32 *)(SUNXI_DRAM_PHY0_BASE + 0x4d4);
                for (i = 0; i < 9; i++) {
-                       writel_relaxed(0x12, ptr);
-                       writel_relaxed(0x12, ptr + 0x30);
+                       writel_relaxed(val, ptr);
+                       writel_relaxed(val, ptr + 0x30);
                        ptr += 2;
                }
-               writel_relaxed(0x1a, SUNXI_DRAM_PHY0_BASE + 0x52c);
-               writel_relaxed(0x1a, SUNXI_DRAM_PHY0_BASE + 0x5ec);
-               writel_relaxed(0x1a, SUNXI_DRAM_PHY0_BASE + 0x51c);
-               writel_relaxed(0x1a, SUNXI_DRAM_PHY0_BASE + 0x5dc);
+
+               if (para->tpr10 & BIT(30))
+                       val = (para->odt_en >> 3) & 0x1e;
+               else
+                       val = (para->tpr12 >> 19) & 0x1e;
+
+               writel_relaxed(val, SUNXI_DRAM_PHY0_BASE + 0x52c);
+               writel_relaxed(val, SUNXI_DRAM_PHY0_BASE + 0x5ec);
+               writel_relaxed(val, SUNXI_DRAM_PHY0_BASE + 0x51c);
+               writel_relaxed(val, SUNXI_DRAM_PHY0_BASE + 0x5dc);
+
+               if (para->tpr10 & BIT(30))
+                       val = (para->tpr12 >> 16) & 0x3f;
+               else
+                       val = (para->tpr12 >> 7) & 0x1e;
 
                ptr = (u32 *)(SUNXI_DRAM_PHY0_BASE + 0x600);
                for (i = 0; i < 9; i++) {
-                       writel_relaxed(0x12, ptr);
-                       writel_relaxed(0x12, ptr + 0x30);
+                       writel_relaxed(val, ptr);
+                       writel_relaxed(val, ptr + 0x30);
                        ptr += 2;
                }
-               writel_relaxed(0x1a, SUNXI_DRAM_PHY0_BASE + 0x6a8);
-               writel_relaxed(0x1a, SUNXI_DRAM_PHY0_BASE + 0x768);
-               writel_relaxed(0x1a, SUNXI_DRAM_PHY0_BASE + 0x648);
-               writel_relaxed(0x1a, SUNXI_DRAM_PHY0_BASE + 0x708);
+
+               if (para->tpr10 & BIT(30))
+                       val = (para->odt_en >> 7) & 0x1e;
+               else
+                       val = (para->tpr12 >> 23) & 0x1e;
+
+               writel_relaxed(val, SUNXI_DRAM_PHY0_BASE + 0x6a8);
+               writel_relaxed(val, SUNXI_DRAM_PHY0_BASE + 0x768);
+               writel_relaxed(val, SUNXI_DRAM_PHY0_BASE + 0x648);
+               writel_relaxed(val, SUNXI_DRAM_PHY0_BASE + 0x708);
+
+               if (para->tpr10 & BIT(30))
+                       val = (para->tpr12 >> 24) & 0x3f;
+               else
+                       val = (para->tpr12 >> 11) & 0x1e;
 
                ptr = (u32 *)(SUNXI_DRAM_PHY0_BASE + 0x654);
                for (i = 0; i < 9; i++) {
-                       writel_relaxed(0x14, ptr);
-                       writel_relaxed(0x14, ptr + 0x30);
+                       writel_relaxed(val, ptr);
+                       writel_relaxed(val, ptr + 0x30);
                        ptr += 2;
                }
-               writel_relaxed(0x1c, SUNXI_DRAM_PHY0_BASE + 0x6ac);
-               writel_relaxed(0x1c, SUNXI_DRAM_PHY0_BASE + 0x76c);
-               writel_relaxed(0x1c, SUNXI_DRAM_PHY0_BASE + 0x69c);
-               writel_relaxed(0x1c, SUNXI_DRAM_PHY0_BASE + 0x75c);
+
+               if (para->tpr10 & BIT(30))
+                       val = (para->odt_en >> 11) & 0x1e;
+               else
+                       val = (para->tpr12 >> 27) & 0x1e;
+
+               writel_relaxed(val, SUNXI_DRAM_PHY0_BASE + 0x6ac);
+               writel_relaxed(val, SUNXI_DRAM_PHY0_BASE + 0x76c);
+               writel_relaxed(val, SUNXI_DRAM_PHY0_BASE + 0x69c);
+               writel_relaxed(val, SUNXI_DRAM_PHY0_BASE + 0x75c);
 
                dmb();
 
@@ -1021,7 +1109,10 @@ unsigned long sunxi_dram_init(void)
                .dx_odt = CONFIG_DRAM_SUN50I_H616_DX_ODT,
                .dx_dri = CONFIG_DRAM_SUN50I_H616_DX_DRI,
                .ca_dri = CONFIG_DRAM_SUN50I_H616_CA_DRI,
+               .odt_en = CONFIG_DRAM_SUN50I_H616_ODT_EN,
                .tpr10 = CONFIG_DRAM_SUN50I_H616_TPR10,
+               .tpr11 = CONFIG_DRAM_SUN50I_H616_TPR11,
+               .tpr12 = CONFIG_DRAM_SUN50I_H616_TPR12,
        };
        unsigned long size;
 
index b00daa458b2840443476988c82ac3e1147c9ba3a..acc64898da193af64b7f099f7137690d5a2cfecc 100644 (file)
@@ -7,6 +7,8 @@ CONFIG_DRAM_SUN50I_H616_DX_ODT=0x03030303
 CONFIG_DRAM_SUN50I_H616_DX_DRI=0x0e0e0e0e
 CONFIG_DRAM_SUN50I_H616_CA_DRI=0x1c12
 CONFIG_DRAM_SUN50I_H616_TPR10=0x2f0007
+CONFIG_DRAM_SUN50I_H616_TPR11=0xffffdddd
+CONFIG_DRAM_SUN50I_H616_TPR12=0xfedf7557
 CONFIG_MACH_SUN50I_H616=y
 CONFIG_R_I2C_ENABLE=y
 # CONFIG_SYS_MALLOC_CLEAR_ON_INIT is not set